Difference between revisions of "MainPage:Nuclear:NPS:PWO:CrystalLOG:SICCAJ36"

From cua_phy
Jump to navigation Jump to search
Line 44: Line 44:
 
| valign="top"|
 
| valign="top"|
 
[[File:SICCAJ36.JPG|thumb|center|340px|xxxx.]]
 
[[File:SICCAJ36.JPG|thumb|center|340px|xxxx.]]
 +
|}
 +
 +
== Light Yield ==
 +
{|border="0" style="text-align:center;" width="100%"
 +
|-
 +
| valign="top"|
 +
[[File:J36-100nsgw.png|thumb|left|340px| 07/26/2016]]
 
|}
 
|}

Revision as of 09:14, 10 August 2016

⇐ Back to Crystal LOG
⇐ Back to Neutral Particle Spectrometer
⇐ Back to the Main_Page

Time LOG

SICCA J36
Date Description Comments
05/02/2016 Pictures Documentation of crystal's conditions as it arrived at CUA.
05/02/2016 Thermal annealing Ramp up at 18°C/hour up to 200°C. Stays for 10 hours and ramp down at 18°C/hour.
05/12/2016 Light Yield Run 3207: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 21.137 ± 0.793 pe/MeV.
05/19/2016 Transverse Transmittance At the center of the crystal, every nm from 200nm until 800nm. Sample: 1361
05/20/2016 Transverse Transmittance Scan Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/07/2016 Longitudinal Transmittance Scan Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/25/16 Light Yield Run: 3251. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius.
07/27/16 Light Yield Run: 3275-3280, 3282, 3283. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth.

Pictures at 04/29/2016

xxxx.
xxxx.

Light Yield

07/26/2016