Difference between revisions of "MainPage:Nuclear:NPS:PWO:CrystalLOG:SICCAJ36"
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[[File:J36-100nsgw.png|thumb|left|340px| 07/26/2016]] | [[File:J36-100nsgw.png|thumb|left|340px| 07/26/2016]] | ||
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+ | == Light Yield Gate Width== | ||
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+ | [[File:J36-100-900 gw.png|thumb|left|340px| 07/26/2016]] | ||
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Revision as of 09:15, 10 August 2016
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⇐ Back to Neutral Particle Spectrometer |
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Time LOG
Date | Description | Comments |
---|---|---|
05/02/2016 | Pictures | Documentation of crystal's conditions as it arrived at CUA. |
05/02/2016 | Thermal annealing | Ramp up at 18°C/hour up to 200°C. Stays for 10 hours and ramp down at 18°C/hour. |
05/12/2016 | Light Yield | Run 3207: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 21.137 ± 0.793 pe/MeV. |
05/19/2016 | Transverse Transmittance | At the center of the crystal, every nm from 200nm until 800nm. Sample: 1361 |
05/20/2016 | Transverse Transmittance Scan | Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s. |
07/07/2016 | Longitudinal Transmittance Scan | Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s. |
07/25/16 | Light Yield | Run: 3251. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. |
07/27/16 | Light Yield | Run: 3275-3280, 3282, 3283. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. |