Difference between revisions of "MainPage:Nuclear:NPS:PWO:CrystalLOG:SICCAJ42"
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| 07/26/2016 || Light Yield || 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents Light Yield: 14.08303047 pe/MeV | | 07/26/2016 || Light Yield || 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents Light Yield: 14.08303047 pe/MeV | ||
| + | |- | ||
| + | |08/01/2016 || Light Yield || 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. | ||
| + | 200ns:3332, 300ns:3341, 400ns:3349, 500ns:3350 600ns:3351, 700ns:3352, 800ns:3354, 900ns:3355, 1000ns:3356 | ||
|} | |} | ||
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| valign="top"| | | valign="top"| | ||
[[File:SICCAJ42.JPG|thumb|center|340px|xxxx.]] | [[File:SICCAJ42.JPG|thumb|center|340px|xxxx.]] | ||
| + | |} | ||
| + | == Light Yield == | ||
| + | {|border="0" style="text-align:center;" width="100%" | ||
| + | |- | ||
| + | | valign="top"| | ||
| + | [[File:J42-100nsgw.png|thumb|left|340px| 07/25/2016]] | ||
| + | |} | ||
| + | |||
| + | == Light Yield Gate Width== | ||
| + | {|border="0" style="text-align:center;" width="100%" | ||
| + | |- | ||
| + | | valign="top"| | ||
| + | [[File:J42-100-900 gw.png|thumb|left|340px| 07/27/2016]] | ||
|} | |} | ||
Revision as of 10:52, 11 August 2016
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Time LOG
| Date | Description | Comments |
|---|---|---|
| 05/02/2016 | Pictures | Documentation of crystal's conditions as it arrived at CUA. |
| 05/02/2016 | Thermal annealing | Ramp up at 18°C/hour up to 200°C. Stays for 10 hours and ramp down at 18°C/hour. |
| 05/19/2016 | Transverse Transmittance | At the center of the crystal, every nm from 200nm until 800nm. Sample: 1357 |
| 05/20/2016 | Transverse Transmittance Scan | Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 05/21/2016 | Light Yield | Run 3217: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 13.26 ± 0.528 pe/MeV. |
| 07/08/2016 | Longitudinal Transmittance Scan | Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 07/26/2016 | Light Yield | 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents Light Yield: 14.08303047 pe/MeV |
| 08/01/2016 | Light Yield | 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth.
200ns:3332, 300ns:3341, 400ns:3349, 500ns:3350 600ns:3351, 700ns:3352, 800ns:3354, 900ns:3355, 1000ns:3356 |
Pictures at 04/29/2016
Light Yield
Light Yield Gate Width
|
File:J42-100-900 gw.png 07/27/2016 |
