Difference between revisions of "MainPage:Nuclear:NPS:PWO:CrystalLOG:SICCAJ43"
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[[File:J43-100nsgw.png|thumb|left|340px| 07/26/2016]] | [[File:J43-100nsgw.png|thumb|left|340px| 07/26/2016]] | ||
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Revision as of 13:57, 11 August 2016
| ⇐ Back to Crystal LOG |
| ⇐ Back to Neutral Particle Spectrometer |
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Time LOG
| Date | Description | Comments |
|---|---|---|
| 05/02/2016 | Pictures | Documentation of crystal's conditions as it arrived at CUA. |
| 05/02/2016 | Thermal annealing | Ramp up at 18oC/hour up to 200oC. Stays for 10 hours and ramp down at 18oC/hour. |
| 05/19/2016 | Transverse Transmittance | At the center of the crystal, every nm from 200nm until 800nm. Sample: 1358 |
| 05/20/2016 | Transverse Transmittance Scan | Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 05/22/2016 | Light Yield | Run 3218: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 15.40 ± 0.716 pe/MeV. |
| 07/08/2016 | Longitudinal Transmittance Scan | Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s. |
| 07/26/2016 | Light Yield | Run:3257. 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents Light Yield: 13.33377558 pe/MeV |
| 08/04/16 | Light Yield | 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth.
200ns: 3358, 300ns:3359, 400ns:3360, 500ns:3361, 600ns:3362, 700ns:3363, 800ns:3364: 900ns:3365, 1000ns:3366 |
| 08/11/2016 | Light Yield | Run:3305. 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents Light Yield: 13.14416177 pe/MeV. LY: 13.93481342phe/MeV |
Pictures at 04/29/2016
Light Yield
Light Yield Gate Width
|
File:J43-100-900 gw.png 08/04/2016 |
