Difference between revisions of "MainPage:Nuclear:NPS:PWO:CrystalLOG:SICCAJ44"
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− | ! "background:#f5f5f5;" style="text-align:center; background:lavender; font-weight:bold; width:10%;" | Date | + | ! "background:#f5f5f5;" style="text-align:center; background:lavender; font-weight:bold; width:10%;" | Date |
+ | ! "background:#f5f5f5;" style="text-align:center; background:lavender; font-weight:bold; width:15%;" | Experimenter(s) | ||
! "background:#f5f5f5;" style="text-align:center; background:lavender; font-weight:bold; width:15%;" | Description | ! "background:#f5f5f5;" style="text-align:center; background:lavender; font-weight:bold; width:15%;" | Description | ||
! "background:#f5f5f5;" style="text-align:center; background:lavender; font-weight:bold; width:75%;" | Comments | ! "background:#f5f5f5;" style="text-align:center; background:lavender; font-weight:bold; width:75%;" | Comments | ||
|- | |- | ||
− | | | + | | 05/02/2016 || Salina || Pictures || Documentation of crystal's conditions as it arrived at CUA. |
|- | |- | ||
− | | | + | | 05/02/2016 || Marco || Thermal annealing || Ramp up at 18oC/hour up to 200oC. Stays for 10 hours and ramp down at 18oC/hour. |
+ | |- | ||
+ | | 05/19/2016 || Marco || Transverse Transmittance || At the center of the crystal, every nm from 200nm until 800nm. Sample: 1360 | ||
+ | |- | ||
+ | | 05/20/2016 || Marco || Transverse Transmittance Scan || Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s. | ||
+ | |- | ||
+ | | 05/24/2016 || Salina || Light Yield || Run 3219: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 12.86 ± 0.655 pe/MeV. | ||
+ | |- | ||
+ | | 07/08/2016 || Marco || Longitudinal Transmittance Scan || Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s. | ||
+ | |- | ||
+ | | 07/26/2016 || Summer Students || Light Yield || Run: 3260. 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents. Light Yield: 14.12 pe/MeV | ||
+ | |- | ||
+ | |07/27/16 || Summer Students || Light Yield || 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. | ||
+ | 200ns: 3382, 300ns:3379, 400ns:3375, 500ns:3377, 600ns:3296, 700ns:3373, 800ns:3372, 900ns:3371, 1000ns:3367 | ||
+ | |- | ||
+ | |01/05/17 || Marco/TH || Irradiation X-ray || 160 kV, 6mA, 15min | ||
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[[File:SICCAJ44.JPG|thumb|center|340px|xxxx.]] | [[File:SICCAJ44.JPG|thumb|center|340px|xxxx.]] | ||
+ | |} | ||
+ | == Light Yield == | ||
+ | {|border="0" style="text-align:center;" width="100%" | ||
+ | |- | ||
+ | | valign="top"| | ||
+ | [[File:J44-100nsgw.png|thumb|left|340px| 07/25/2016]] | ||
+ | |} | ||
+ | |||
+ | == Light Yield Gate Width== | ||
+ | {|border="0" style="text-align:center;" width="100%" | ||
+ | |- | ||
+ | | valign="top"| | ||
+ | [[File:J44-100-900 gw.png|thumb|left|340px| 07/27/2016]] | ||
|} | |} |
Latest revision as of 11:59, 20 September 2017
⇐ Back to Crystal LOG |
⇐ Back to Neutral Particle Spectrometer |
⇐ Back to the Main_Page |
Time LOG
Date | Experimenter(s) | Description | Comments |
---|---|---|---|
05/02/2016 | Salina | Pictures | Documentation of crystal's conditions as it arrived at CUA. |
05/02/2016 | Marco | Thermal annealing | Ramp up at 18oC/hour up to 200oC. Stays for 10 hours and ramp down at 18oC/hour. |
05/19/2016 | Marco | Transverse Transmittance | At the center of the crystal, every nm from 200nm until 800nm. Sample: 1360 |
05/20/2016 | Marco | Transverse Transmittance Scan | Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s. |
05/24/2016 | Salina | Light Yield | Run 3219: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 12.86 ± 0.655 pe/MeV. |
07/08/2016 | Marco | Longitudinal Transmittance Scan | Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s. |
07/26/2016 | Summer Students | Light Yield | Run: 3260. 3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents. Light Yield: 14.12 pe/MeV |
07/27/16 | Summer Students | Light Yield | 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth.
200ns: 3382, 300ns:3379, 400ns:3375, 500ns:3377, 600ns:3296, 700ns:3373, 800ns:3372, 900ns:3371, 1000ns:3367 |
01/05/17 | Marco/TH | Irradiation X-ray | 160 kV, 6mA, 15min |
Pictures at 04/29/2016
Light Yield
Light Yield Gate Width
File:J44-100-900 gw.png 07/27/2016 |