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Time LOG

SICCA J42

Date	Description	Comments
05/02/2016	Pictures	Documentation of crystal's conditions as it arrived at CUA.
05/02/2016	Thermal annealing	Ramp up at 18°C/hour up to 200°C. Stays for 10 hours and ramp down at 18°C/hour.
05/19/2016	Transverse Transmittance	At the center of the crystal, every nm from 200nm until 800nm. Sample: 1357
05/20/2016	Transverse Transmittance Scan	Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s.
05/21/2016	Light Yield	Run 3217: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 13.26 ± 0.528 pe/MeV.
07/08/2016	Longitudinal Transmittance Scan	Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/26/2016	Light Yield	3 layers of teflon tape, 1 layer of electrical tape. ~50,000 incidents Light Yield: 14.08303047 pe/MeV
08/01/2016	Light Yield	3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. 200ns:3332, 300ns:3341, 400ns:3349, 500ns:3350 600ns:3351, 700ns:3352, 800ns:3354, 900ns:3355, 1000ns:3356
07/08/2016	Longitudinal Transmittance Scan	Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/10/2017	Light Yield	Run 3695. 100ns gw. ~50,000 incidents ~3 layers of teflon tape ~1 layer of electrical. LY=10.97 pe/MeV.
07/27/2017	Crystal Broke	} Pictures at 04/29/2016 xxxx. xxxx. Pictures at 07/27/2017 File:SICCAJ42 Broken1.jpg xxxx. File:SICCAJ42 Broken2.JPG xxxx. Light Yield 07/25/2016 Light Yield Gate Width File:J42-100-900 gw.png 07/27/2016