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Time LOG

**SICCA J36**
Date	Description	Comments
05/02/2016	Pictures	Documentation of crystal's conditions as it arrived at CUA.
05/02/2016	Thermal annealing	Ramp up at 18°C/hour up to 200°C. Stays for 10 hours and ramp down at 18°C/hour.
05/12/2016	Light Yield	Run 3207: crystal wrapped with ~5 layers of teflon tape and 2 layers of black electrical tape. Steps of 20min, 1cm. T=18°C. LY = 21.137 ± 0.793 pe/MeV.
05/19/2016	Transverse Transmittance	At the center of the crystal, every nm from 200nm until 800nm. Sample: 1361
05/20/2016	Transverse Transmittance Scan	Wavelengths: 360nm, 420nm, 620nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/07/2016	Longitudinal Transmittance Scan	Wavelengths: 200-800 nm. Sampling period: 0.6s, moving motor at 2mm/s.
07/25/16	Light Yield	Run: 3251. 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. Light Yield: 11.77226027 pe/MeV
07/27/16	Light Yield	3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. 200ns gatewidth->1000ns gatewidth. 200ns: 3278, 300ns:3274, 400ns:3275, 500ns:3276, 600ns:3279, 700ns:3280, 800ns:3281,900ns:3282, 1000ns:3283
08/12/16	Light Yield	Run: . 3 layers of teflon 1 later of electrical. ~50,000 incidents at ~18 degrees Celsius. Light Yield: 11.77226027 pe/MeV